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  Datasheet File OCR Text:
 BB 640
Silicon Variable Capacitance Diode
q
BB 640
For Hyperband TV/VTR tuners, Bd I
Type BB 640
Ordering Code (tape and reel) Q62702-B589
Pin Configuration Marking 1 2 C A red S
Package SOD-323
Maximum Ratings Parameter Reverse voltage Reverse voltage (R 5 k) Forward current Operating temperature range Storage temperature range Thermal Resistance Junction - ambient Rth JA
Symbol VR VRM IF Top Tstg
Values 30 35 20 - 55 ... + 150
Unit V mA
- 55 ... + 150 C
450
K/W
Semiconductor Group
1
02.96
BB 640
Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Reverse current VR = 30 V VR = 30 V, TA = 85 C Diode capacitance, f = 1 MHz VR = 1 V VR = 28 V Capacitance ratio VR = 1 V, 28 V, f = 1 MHz Capacitance matching VR = 1 V ... 28 V, f = 1 MHz Series resistance CT = 30 pF, f = 100 MHz Series inductance Symbol min. IR - - CT 62 2.9 CT1 CT28
CT
Values typ. - - max.
Unit nA 10 200 pF
- - - - 1.15 2
76 3.4 25 2.5 - - - % nH
19.5 - - -
CT rs LS
Diode capacitance CT = f (VR) f = 1 MHz
Semiconductor Group
2


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